Crystal structure and composition of polycrystalline CuInSe2

This work presents and analyses the X-ray diffraction data for the semiconducting compound CuInSe₂, synthesized by the vertical Bridgman method. The (Cu/In) ratio was varied to produce a stoichiometric CuInSe₂ ingot. Structure factors (F_hkl) equations for the (hkl) reflections, which are available for the ternary chalcopyrite-structured semiconductors, were deduced analytically and have been used to calculate the relative peak intensities for CuInSe₂ diffraction planes.CuInSe₂ thin films were also prepared by flash evaporation of a stoichiometric CuInSe₂ powder, onto different substrates. Structural characterization of these films was carried out by X-ray diffraction and scanning electron microscopy studies. The composition of the different samples has been determined by energy dispersive spectrometry. The results obtained indicate the presence of the chalcopyrite phase and nearly stoichiometric compositions.