8GHz双栅FET上变频器

本文阐述了双栅FET的变频原理。通过对南京固体器件研究所WC52型双栅FET直流特性及微波“s”参数的分析,叙述了直流工作点的选择和微波匹配电路的设计。 研制了上变频器,并已用于8GHz无人值守微波中继机中。连同前置匹配放大器获得如下性能:输出频率8059.02±20MHz,输入频率140±20MHz,本振频率为8199.02MHz,增益22dB,1dB增益压缩点输出电平+4dBm,1dB压缩点处三阶交调产物为-23dBc。

An 8GHz Dual-Gate FET Up-Converter

A frequencv-conversion principle of a GaAs dual-gate FET is described in this paper. The choice of the DC operating point and the design approach of the matching circuit are illustrated through analysing the DC characteristic and the s-parameter of the WC52 GaAs dual-gate FET fabricated by NSR. The 8GHz up-converter has been developed and used in an SGHz unattended MIC relay station. Combined with the preamplifier, the up-converter exhibits the following performances: The gain is 22dB from 140±20MHz IF to 8059.02 ±20MHz output with LO 8199.02MHz. The output 1dB gain compression point is + 4dBm, and the 3rd-order IM product level is -23dBc at this point.