Low-k dielectrics: a non-destructive characterization by infrared spectroscopic ellipsometry |
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Authors: | P Boher C Defranoux M Bucchia C Guillotin |
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Affiliation: | SOPRA, 26 rue Pierre Joigneaux, 92270, Bois Colombes, France |
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Abstract: | An infrared spectroscopic ellipsometer devoted to the characterization of silicon microelectronics has recently been developed at SOPRA. Its main feature is the ability to measure on a small spot (80×200 μm) with a high signal/noise ratio. An original patented optical design suppresses back face reflection and ensures good-quality spectral measurements in the 600–7000 cm?1 range. The excellent signal/noise ratio allows the performance of measurements in less than 30 s. Automation and real-time analysis are included to offer an operator-orientated metrology tool. Details of the instrument are presented, and its use for the characterization of different kinds of low-k dielectrics. |
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Keywords: | Low-k dielectrics Non-destructive characterization Infrared spectroscopic ellipsometry |
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