| 衬底热空穴耦合的薄栅TDDB效应 |
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| 引用本文： | 刘红侠,郝跃,张进城. 衬底热空穴耦合的薄栅TDDB效应[J]. 半导体学报, 2001, 22(10): 1310-1314 |
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| 作者姓名： | 刘红侠 郝跃 张进城 |
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| 作者单位： | 西安电子科技大学微电子研究所，西安710071 |
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| 基金项目： | 国家军事电子预研基金;8.5.3.4; |
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| 摘 要： | 通过衬底热空穴 (SHH,Substrate Hot Hole)注入技术 ,对 SHH增强的薄 Si O2 层击穿特性进行了研究 .与通常的 F- N应力实验相比 ,SHH导致的薄栅氧化层击穿显示了不同的击穿特性 .其击穿电荷要比 F- N隧穿的击穿电荷大得多 ,栅氧化层的击穿电荷量与注入的空穴流密度和注入时空穴具有的能量以及栅电压有关 .这些新的实验结果表明 F- N应力导致的薄栅氧化层的击穿不仅由注入的空穴数量决定 .提出了一个全新的衬底热空穴耦合的TDDB(Tim e Dependent Dielectric Breakdown)模型
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| 关 键 词： | 薄栅氧化层 经时击穿 衬底热空穴 击穿电荷 模型 |
| 文章编号： | 0253-4177(2001)10-1310-05 |
| 修稿时间： | 2000-11-23 |
Substrate Hot Hole Coupled TDDB Effects of Thin Gate |
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| LIU Hong xia,HAO Yue and ZHANG Jin cheng. Substrate Hot Hole Coupled TDDB Effects of Thin Gate[J]. Chinese Journal of Semiconductors, 2001, 22(10): 1310-1314 |
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| Authors: | LIU Hong xia HAO Yue ZHANG Jin cheng |
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| Abstract: | SHH (Substrate Hot Hole) enhanced breakdown characteristic of thin SiO 2 is investigated by using SHH injection techniques.Compared with conventional F N stressing experiments,SHH induced thin gate oxide breakdown shows different breakdown characteristics.Depending the injected hole flux density,hole energy and the gate voltage,its charge breakdown is much larger than that of F N stress.It is revealed that F N stress induced thin gate oxide breakdown is not simply determined by the total number of the injected holes.A new SHH enhanced TDDB model is presented. |
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| Keywords: | thin gate oxide TDDB SHH charge to breakdown model |
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