| 半导体合金介电常数的紧束缚计算 |
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| 引用本文： | 徐至中.半导体合金介电常数的紧束缚计算[J].固体电子学研究与进展,1990,10(3):271-277. |
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| 作者姓名： | 徐至中 |
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| 作者单位： | 复旦大学表面物理研究室 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 采用经验的紧束缚方法,在虚晶近似下,计算了与InP晶格相匹配的半导体合金Ga_xIn_(1-x)P_yAs_(1-y)的介电常数虚部.计算时同时考虑了动量矩阵元的效应.
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| 关 键 词： | 半导体合金 介电常数 束缚计算 |
Calculations of Dielectric Constants of Semiconductor Alloys in Tight-Binding Frame |
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| Abstract: | Using the empirical tight-binding method, the imaginary parts of dielectric constants of semiconductor alloys GaxIn1-xPyAs1-y lattice-matched to InP have been calculated in virtual crystal approximation, The effects of momentum matrix elements have been considered in the calculation. |
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