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中频脉冲溅射制备绒面ZnO透明导电薄膜
引用本文:刘佳宇,杨瑞霞,牛晨亮,薛俊明,赵颖,耿新华.中频脉冲溅射制备绒面ZnO透明导电薄膜[J].微纳电子技术,2006,43(4):186-189.
作者姓名:刘佳宇  杨瑞霞  牛晨亮  薛俊明  赵颖  耿新华
作者单位:1. 河北工业大学信息学院,天津,300130;南开大学光电子薄膜器件与技术研究所&天津市重点实验室,光电信息技术科学教育部重点实验室,天津,300071
2. 河北工业大学信息学院,天津,300130
3. 南开大学光电子薄膜器件与技术研究所&天津市重点实验室,光电信息技术科学教育部重点实验室,天津,300071
摘    要:采用中频脉冲磁控溅射系统制备高透过率、高电导率的平面ZnO薄膜。电阻率为5.57×10-4Ω·cm,载流子浓度2.2×1020cm-3,霍尔迁移率40.1cm2/V·s,可见光范围内(400~800nm)的平均透过率大于85%。用酸腐蚀的方法可以获得绒面效果。分析了气压和温度对绒面结构的影响,获得了适合薄膜太阳能电池要求的绒面ZnO透明导电薄膜。

关 键 词:中频脉冲溅射  绒面氧化锌  透明导电膜
文章编号:1671-4776(2006)04-0186-04
收稿时间:2005-11-30
修稿时间:2005年11月30

Textured ZnO Transparent Conductive Thin Film Prepared by Mid-Frequency Magnetron Sputtering
LIU Jia-yu,YANG Rui-xia,NIU Chen-liang,XUE Jun-ming,ZHAO Ying,GENG Xin-hua.Textured ZnO Transparent Conductive Thin Film Prepared by Mid-Frequency Magnetron Sputtering[J].Micronanoelectronic Technology,2006,43(4):186-189.
Authors:LIU Jia-yu  YANG Rui-xia  NIU Chen-liang  XUE Jun-ming  ZHAO Ying  GENG Xin-hua
Abstract:The smooth ZnO film with high conductivity and high transmission was obtained by mid-frequency magnetron sputtering.The resistivity of the film is 5.57×10-4 Ω·cm,the carrier concentration is 2.2×1020 cm-3 and the Hall mobility is 40.1 cm2/V·s.The avarage transmissivity is >85% within the visible range(400~800 nm).The textured ZnO was gained by post-deposition chemical etching.The influence of sputtering pressure and sputtering temperature on the structure of textured ZnO was analyzed.The textured ZnO for thin film solar cells was obtained.
Keywords:mid-frequency sputtering  textured ZnO  transparent conductive film
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