Ga0.47In0.53As metal-semiconductor-metalphotodiodes using a lattice mismatchedAl0.4Ga0.6As Schottky assist layer |
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| Authors: | Kikuchi T. Ohno H. Hasegawa H. |
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| Affiliation: | Fac. of Eng., Hokkaido Univ., Sapporo; |
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| Abstract: | Metal-semiconductor-metal photodiodes (MSM PDs) with Ga0.47 In0.53As active layers were fabricated. The low Schottky barrier height of GaInAs was overcome by the insertion of a lattice mismatched AlGaAs intermediary layer between metal and GaInAs active layer. Fabricated MSM PDs utilising interdigitated metal electrodes formed by a self-alignment technique showed a fast rise and fall time of 650 ps, which was limited by the capacitance of the device. The gain of the device was less than 1 |
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