8 GHz, 10 W solid-state power amplifier for microwave digital radio |
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| Authors: | Cheng T.C. |
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| Affiliation: | M.A. Electronics Canada Limited, M/A-COM Company, Mississauga, Canada; |
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| Abstract: | An 8 GHz, 10 W GaAs FET prototype power amplifier has been developed to replace the TWT in the Northern Telecom's digital microwave radio system. For a single bit stream of 91.04 Mbit/s, the residual bit error rate at 40 dBm output level was 1.0×10?32 compared with 1.0×10?23 for TWT; the AM/AM conversion ratio was 0.375 dB/dB and AM/PM was 0.84°/dB. The total mean time between failure of the amplifier was 350 000 h. |
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