A Study on the Breakdown Mechanism of an Electroless-Plated Ni(P) Diffusion Barrier for Cu/Sn/Cu 3D Interconnect
Bonding Structures |
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Authors: | Byunghoon Lee Haseok Jeon Seong-Jae Jeon Kee-Won Kwon Hoo-Jeong Lee |
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Affiliation: | 1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Jangan, Suwon, 440-736, South Korea 2. Division of Semiconductor Systems Engineering, Sungkyunkwan University, Jangan, Suwon, 440-736, South Korea
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Abstract: | This study examined the thermal stability of an electroless-plated Ni(P) barrier layer inserted between Sn and Cu in the bonding
structure of Cu/Sn/Cu for three-dimensional (3D) interconnect applications. A combination of transmission electron microscopy
(TEM) and scanning electron microscopy allowed us to fully characterize the bonding morphology of the Cu/Ni(P)/Sn/Ni(P)/Cu
joints bonded at various temperatures. The barrier suppressed Cu and Sn interdiffusion very effectively up to 300°C; however,
an interfacial reaction between Ni(P) and Sn led to gradual decomposition into Ni3P and Ni3Sn4. Upon 350°C bonding, the interfacial reaction brought about complete disintegration of the barrier in local areas, which
allowed unhindered interdiffusion between Cu and Sn. |
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