| Silicon Film Fabrication by Liquid Phase Epitaxy at Low Temperature |
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| 引用本文： | QIANYongbiao SHIWeimin 等. Silicon Film Fabrication by Liquid Phase Epitaxy at Low Temperature[J]. 半导体光子学与技术, 1998, 4(1): 18-24 |
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| 作者姓名： | QIANYongbiao SHIWeimin 等 |
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| 作者单位： | [1]SchoolofMaterialsScienceandEngineering,JiadingCampus,ShanghaiUniversity,Shanghai201800,CHN [2]SchoolofMa,JiadingCampus,ShanghaiUniversity,Shanghai201800,CHN |
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| 摘 要： | Low temperature liquid phase epitaxy of silicon thin films was successfully carried out at a temperature of (400-500)℃,using Au/Bi alloy as a Si-saturated Sn solution was used to protect the substrate surface,preventing effectively the oxidation of silicon .The grown Si thin films were identified by SEM,AES and C-V measurements.
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| 关 键 词： | 低温 液相外延 太阳能电池 硅 |
| 收稿时间： | 1997-11-17 |
Silicon Film Fabrication by Liquid Phase Epitaxy at Low Temperature |
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| QIAN Yongbiao,SHI Weimin,CHEN Peifeng,MIN Jiahua,GU Yongming,GUO Yanming,SANG Wenbin. Silicon Film Fabrication by Liquid Phase Epitaxy at Low Temperature[J]. Semiconductor Photonics and Technology, 1998, 4(1): 18-24 |
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| Authors: | QIAN Yongbiao SHI Weimin CHEN Peifeng MIN Jiahua GU Yongming GUO Yanming SANG Wenbin |
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| Abstract: | Low temperature liquid phase epitaxy of silicon thin films was successfully carried out at a temperature of (400～500)℃,using Au/Bi alloy as a Si-saturated Sn solution was used to protect the substrate surface,preventing effectively the oxidation of silicon.The grown Si thin films were identified by SEM,AES and C-V measurements. |
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| Keywords: | Low Temperature LPE Silicon Film Solar Cell |
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