Low resistivity p+ diamond (100) films fabricated by hot-filament chemical vapor deposition |
| |
| Affiliation: | 1. National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan;2. Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand;1. State Key Laboratory of Geological Processes and Mineral Resources, University of Geosciences, Beijing 100083, China;2. State Key Laboratory of Isotope Geochemistry, Guangzhou Institute of Geochemistry, Chinese Academy of Sciences, Wushan, Guangzhou 510650, China;1. Department of Physics, Nano Functional Materials Technology Centre (NFMTC) and Materials Science Research Centre (MSRC), Indian Institute of Technology Madras (IITM), Chennai 600036, India;2. Department of Physics, National Institute of Technology (NIT), Kozhikode 673601, India;3. UGC DAE Consortium for Scientific Research, Khandwa Road, Indore 01, India;4. Department of Physics, Low Temperature Physics Laboratory, Indian Institute of Technology Madras, Chennai 600036, India;1. School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjyuku-ku, Tokyo 169-8555, Japan;2. MANA National Institute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;3. Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan |
| |
| Abstract: | By hot-filament (HF) chemical vapor deposition (CVD), heavily boron (B)-doped single-crystal diamond (100) films were fabricated and their structural and electrical properties were studied. We did not observe the soot formation, which is frequently observed and limits the performances in the case of microwave plasma (MWP) CVD. The B concentration was successfully controlled over the range from 1019 to 1021 cm− 3. Hillock-free films were obtained, whose mean surface roughness measured by atomic force microscopy (AFM) was less than 0.1 nm. From the reciprocal space mapping (RSM) around 113 diamond reflection, it was revealed that the films possess the smaller lattice expansion than that expected from the Vegard's law. The room-temperature resistivity was decreased lower than 1 mΩ·cm for B concentration ~ 1021 cm− 3. These results indicate that the HFCVD possesses large potential for fabricating the device-grade p+ diamond. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
