Effect of thickness on structural,optical, electrical and morphological properties of nanocrystalline CdSe thin films for optoelectronic applications |
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| Affiliation: | 1. Department of Physics, Mohanlal Sukhadia University, Udaipur 313001, India;2. Centre of Excellence for Energy and Environmental Studies, Deenbandhu Chhotu Ram University of Science and Technology, Murthal, Sonepat 131039, India;3. Department of Physics, University of Rajasthan, Jaipur 302004, India;1. Department of Applied Physics, Indian School of Mines, Dhanbad 826004, India;2. Department of Physics, Central University of Rajasthan, India;3. Thin films and nanotechnology lab., Physics Department, Faculty of Science, Sohag University, 82524 Sohag, Egypt;1. Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;3. Institute of Electrical Engineering and Advanced Electromagnetic Drive Technology, Qilu Zhongke, Jinan 250102, China;4. Georgia College and State University, Milledgeville, GA 31061, USA;1. Holography and Materials Research Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, Maharashtra, India;2. Department of Biological and Environmental Science, College of Life Science and Biotechnology, Dongguk University-Seoul, Jung-gu, Seoul 100-715, Republic of Korea;3. Department of Environmental Engineering, Kyungpook National University, 80 Daehak-ro, Buk-gu, Daegu 702-701, Republic of Korea;4. Radiation & Photochemistry Division, BARC, Mumbai 400085, India |
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| Abstract: | This paper presents effect of thickness on the physical properties of thermally evaporated cadmium selenide thin films. The films of thickness 445 nm, 631 nm and 810 nm were deposited employing thermal evaporation technique on glass and ITO coated glass substrates followed by thermal annealing in air atmosphere at temperature 300 °C. The as-deposited and annealed films were subjected to the XRD, UV–Vis spectrophotometer, source meter, SEM and EDS to find the structural, optical, electrical, morphological and compositional analysis respectively. The structural analysis shows that the films have cubic phase with preferred orientation (1 1 1) and nanocrystalline nature. The structural parameters like inter-planner spacing, lattice constant, grain size, number of crystallites per unit area, internal strain, dislocation density and texture coefficient are calculated. The optical band gap is found in the range 1.69–1.84 eV and observed to decrease with thickness. The electrical resistivity is found to increase with thickness for as-deposited films and decrease for annealed films. The morphological studies show that the as-deposited and annealed films are homogeneous, smooth, fully covered and free from crystal defects like pin holes and voids. The grains in the as-deposited films are densely packed, well defined and found to be increased with thickness. |
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| Keywords: | CdSe thin films Physical properties Thickness Annealing Thermal evaporation |
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