Optical properties of the low-energy Ge-implanted and annealed SiO2 films |
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| Affiliation: | 1. Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091, China;2. Yunnan Key Laboratory for the Micro/Nano Materials & Technology, Yunnan University, Kunming 650091, China;3. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, China;1. Department of Physics, University of the Free State, Bloemfontein ZA9300, South Africa;2. Instituto de Química, Universidade de São Paulo, São Paulo, SP, Brazil;3. Department of Chemistry, University of Turku, FI-20014 Turku, Finland;4. Turku University Centre for Materials and Surfaces (MatSurf), Turku, Finland;5. DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria 0001, South Africa;1. Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091, China;2. Yunnan Key Laboratory for the Micro/Nano Materials & Technology, Yunnan University, Kunming 650091, China;3. School of Material Science and Engineering, Kunming University of Science and Technology, Xuefu RD, Kunming 650093, China;1. Department of Electrical and Electronics Engineering, Erciyes University, 38039 Kayseri, Turkey;2. Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215, USA;3. Photonics Center, Boston University, Boston, MA 02215, USA;1. School of Electrical and Computer Engineering, University of Seoul, 163 Seoulsiripdae-ro, Dongdaemun-gu, Seoul 130-743, South Korea;2. Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 136-791, South Korea;3. Nano Photonics Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, South Korea |
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| Abstract: | Ultraviolet–visible light emissions from nanocrystalline (nc) Ge-embedded SiO2 films fabricated by ion implantation and rapid annealing techniques are studied as a function of different fabricating conditions (implanting dose and annealing temperature). The samples exhibit seven photoluminescence (PL) peaks peaked at 1.68, 1.75, 1.84, 1.93, 2.00, 2.70, and 3.10 eV. There are also two excitation bands in the PL excitation (PLE) spectra peaked at 4.90 and 5.19 eV. Raman spectra are employed to observe and understand structural variations in SiO2 matrix during the formation of nc-Ge and defects. Within the frame of the quantum confinement (QC) theory and Oswald ripening growth model, the origin and evolution of the seven PL peaks and two PLE bands are identified clearly demonstrated by the proposed energy-level and generated process diagrams. Our results indicate that both the implanting dose and annealing temperature play a dominant role in modulating the optical properties of the nc-Ge-embedded SiO2 films. |
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| Keywords: | Nanocrystalline Ge Room temperature photoluminescence Low-energy implantation Rapid thermal process |
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