The electronic structure and luminescence properties of Ce3+ doped Sr10[(PO4)5.5(BO4)0.5]BO2 under UV/VUV and X-ray excitation |
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| Affiliation: | 1. Key Laboratory of Transparent Opto-Functional Inorganic Materials of Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai 200050, PR China;2. University of Chinese Academy of Sciences, Beijing 100039, PR China;3. School of Materials Science and Engineering, Shanghai University, Shanghai 200072, PR China;4. Laboratory for Advanced Scintillation Materials & Performance, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, PR China;1. National Research and Development Institute for Chemistry and Petrochemistry – ICECHIM, 202 Splaiul Independentei, 060021 Bucharest, Romania;2. Institute of Physical Chemistry “Ilie Murgulescu”, 202 Splaiul Independentei, 060021 Bucharest, Romania;1. Laser Research Institute, Shahid Beheshti University, Tehran, Iran;2. Department of Chemistry, Faculty of Science, University of Tehran, Iran;3. Nano-Optics Research Group, Tehran, Iran;1. School of Information Science and Engineering, Shandong University, Jinan 250100, China;2. Key Laboratory of Transparent and Opto-Functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;1. Department of Physics, MES College Ponnani, Kerala 679 586, India;2. Lasers and Nonlinear Optics Lab, Department of Physics, National Institute of Technology, Calicut, Kerala 673 601, India;3. Department of Chemistry, University of Calicut, Calicut 673 635, India;4. Department of Physics, University of Calicut, Calicut 673 635, India |
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| Abstract: | The apatite related compound Sr10(PO4)5.5(BO4)0.5]BO2 (SrBPO) doped with Ce3+ was synthesized via solid state reaction method. Undoped SrBPO shows blue-green emission under ultraviolet (UV) and X-ray excitation due to the defects in the host. When excited by vacuum ultraviolet–ultraviolet (VUV–UV) light or X-ray, Ce3+ doped SrBPO shows a broad emission band peaking at 450 nm originating from 5d–4f transition of Ce3+ and defects in the host. The phosphor exhibits strong excitation bands in UV range and a weak broad excitation band in VUV region. The site occupation of Ce3+ was proposed based on fluorescence decay curves. Electronic structure shows the compound is an indirect semiconductor with a band gap of 3.04 eV. The extremely small density of states of PO4]3? or BO4]5? group near Fermi level or in the conduction band is a possible origin of the weak excitation band in the VUV range. A possible mechanism was proposed to explain the luminescence properties observed. |
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| Keywords: | VUV Electronic structure Luminescence |
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