Power high-voltage and fast response Schottky barrier diamond diodes |
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| Affiliation: | 1. Technological Institute for Superhard and Novel Carbon Materials, 7a Centralnaya St., Troitsk, Moscow 142190, Russia;2. Moscow Institute of Physics and Technology, 9 Institutskiy Per., Dolgoprudny, Moscow Region 141700, Russia;3. National University of Science and Technology MISiS, 4 Leninsky Ave., Moscow 119049, Russia;1. Univ. Grenoble Alpes, F-38000 Grenoble, France;2. CNRS, G2ELab, F-38000 Grenoble, France;3. CNRS, Institut Néel, F-38000 Grenoble, France;1. Instituto de Telecomunicações, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal;2. Instituto de Telecomunicações, Avenida Rovisco Pais 1, 1049-001 Lisboa, Portugal;3. Universidade do Algarve, Faculdade de Ciências e Tecnologia, Campus de Gambelas, 8005-139 Faro, Portugal;4. Centro Universitário FEI, Physics Department, São Bernardo do Campo, SP, Brazil;5. Department of Electronics, Telecommunications and Informatics, University of Aveiro, 3810-193 Aveiro, Portugal;6. Department of Physics and I3N, Institute for Nanostructures, Nanomodulation and Nanofabrication, University of Aveiro, 3810-193 Aveiro, Portugal;1. Sain Petersburg State University, Department of Crystallography, Dekabristov Ln. 16, St. Petersburg 199155, Russia;2. V.G. Khlopin Radium Institute (KRI), 2nd Murinsky av. 28, St. Petersburg 194021, Russia;3. Ioffe Institute, 26 Politekhnicheskaya st., St. Petersburg 194021, Russia |
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| Abstract: | We developed and investigated a set of packaged vertical diamond Schottky barrier diodes (SBDs) with a large crystal area of up to 25 mm2. All devices show forward current above 5 A and the blocking voltage over 1000 V in the temperature range from 20 °C to 250 °C. Due to the large crystal area and finite thermal resistance of the crystal-case interface the forward current self-heating effect results in a good diamond SBDs performance not only at elevated temperatures but also at normal conditions. As a result we measured about 4 V forward voltage drop, 35 mΩ × cm2 specific on-resistance and 100 nA/cm2 leakage current for the diode case at room temperature. At a case temperature of 250 °C the forward voltage drop was less than 2.5 V, the specific on-resistance about 40 mΩ × cm2 and the leakage current about 100 μA/cm2. The Baliga's figure of merit was 25–30 MW/cm2 in the temperature range of 20-250 °C. The typical value of the reverse recovery time less than 10 ns while switching from 2 A forward current to 100 V blocking voltage meets the requirements for practical use of diamond SBDs in effective switch-mode power converters operating at frequencies higher than 1 MHz. Further device design optimization and the diamond epitaxial layer quality improvement will help to reduce the power losses in on-state and make diamond SBDs competitive with SiC diodes even at room temperature. |
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