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Photoluminescence studies on energy transfer processes in cerium-doped Gd3Al2Ga3O12 crystals

Affiliation:	1. Department of Physics, Faculty of Science, Yamagata University, Yamagata 990-8560, Japan;2. New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan;3. Institute for Materials Research, Tohoku University, Sendai 980-8679, Japan;4. Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan;1. Institute of Physics of Kazimierz Wielki University in Bydgoszcz, Bydgoszcz, Poland;2. European Synchrotron Radiation Facility (ESRF), Grenoble, France;3. Institute Lumière Matière, UMR5306 CNRS, Claude Bernard University Lyon 1, France;4. Electronics Department of Ivan Franko National University in Lviv, Lviv, Ukraine;5. SSI Institute for Single Crystals, National Academy of Sciences of Ukraine, Kharkiv, Ukraine;6. Institute of Nuclear Physics, Polish Academy of Sciences, Krakow, Poland;1. Radiological and Medical Laboratory Sciences, Nagoya University Graduate School of Medicine, Japan;2. Department of Energy Engineering, Nagoya University, Graduate School of Engineering, Japan;1. C&A Corporation, T-Biz, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan;2. Tohoku University, New Industry Creation Hatchery Center, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan;3. Tohoku University, Institute for Material Reseach, 2-1-1 Katahira Aoba-ku, Sendai, Miyagi 980-8577, Japan;4. Institute of Physics AS CR, Cukrovarnicka 10, 16253 Prague, Czech Republic;1. Energie Campus Nürnberg (EnCN), Fürther Str. 250, 90429 Nürnberg, Germany;2. Institute of Materials for Electronics and Energy Technology (i-MEET), Friedrich-Alexander-Universität Erlangen-Nürnberg, Martensstraße 7, 91058 Erlangen, Germany;3. Erlangen Graduate School in Advanced Optical Technologies (SAOT), Friedrich-Alexander-Universität Erlangen-Nürnberg, Paul-Gordan-Str. 6, 91052 Erlangen, Germany;4. Institute of Physics of Kazimierz Wielki University in Bydgoszcz, ul. Powstańcow Wielkopolskich, 2, 85-064 Bydgoszcz, Poland;5. SSI Institute for Single Crystals, National Academy of Sciences of Ukraine, av. Nauky, 60, 61178 Kharkiv, Ukraine;1. Ceramic Laboratory, Laser Materials Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, India;2. Department of Optoelectronics, University of Kerala, India

Abstract:	We have measured photoluminescence properties of cerium-doped Gd₃Al₂Ga₃O₁₂ (Ce:GAGG) crystals at low temperatures with use of synchrotron radiation. Excitation spectra for the Ce³⁺ 5d–4f emission exhibit prominent peaks at Gd³⁺ intra-4f absorption bands. The Gd³⁺ intra-4f emission band is observed at 3.91 eV, but is not in resonance with the lowest energy Gd³⁺ intra-4f absorption band at 3.95 eV. The temperature dependence of the Gd³⁺ emission intensity is not correlated with that of the Ce³⁺ emission intensity. Decay curves of the Ce³⁺ emission were also measured at 9 K under excitation at various photon energies. The decay curve is remarkably changed, depending on the excitation photon energies. The present results give us hints to understand the whole of energy transfer processes in Ce:GAGG crystals.

Keywords:	Energy transfer Host sensitization Photoluminescence Scintillator Ce:GAGG Synchrotron radiation
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