Simulation of carbon nanotube based p-n junction diodes |
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| Authors: | Jingqi Li Mary B Chan-Park |
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| Affiliation: | a Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Block S2.2, 50 Nanyang Avenue, 639798 Singapore, Singapore
b School of Chemical and Biomedical Engineering, Nanyang Technological University, 639798 Singapore, Singapore |
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| Abstract: | Taking advantage of the unique characteristics of an ambipolar carbon nanotube field effect transistor (CNTFET), a ‘p-n junction’ is simulated along the single-walled carbon nanotube channel using two separate gates close to the source and drain of the CNTFET, respectively. The current-voltage characteristics of the double-gated CNTFET are calculated using a semiclassical method based on the Schottky barrier field effect transistor mechanism. The calculation results show a good rectification performance of the p-n junction. |
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| Keywords: | Carbon nanotubes Electrical (electronic) properties |
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