Effect of a hydrogen ratio in electrical and optical properties of hydrogenated Al-doped ZnO films |
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| Authors: | S J Tark Y-W Ok M G Kang H J Lim W M Kim D Kim |
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| Affiliation: | 1. Department of Materials Science and Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul, 137-713, South Korea
2. Division of Materials, Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul, 130-650, South Korea
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| Abstract: | This study examined the effect of the hydrogen ratio on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt% ZnO, 2 wt% Al2O3). Various AZO films on glass were prepared by changing the H2/(Ar?+?H2) ratio at room temperature. The AZO/H films showed a lower resistivity and a higher carrier concentration and mobility than the AZO films. However, the resistivity and mobility of the AZO/H films increased and decreased with increasing H2 flow ratio, respectively. As a result, the AZO/H films grown with 2% H2 addition showed excellent electrical properties with a resistivity of 4.98?×?104 Ωcm. The UV-measurements showed that the optical transmission of the AZO/H films was >85% in the visible range with a wide optical band gap. In addition, the effect of H2 flow ratio on the structure and composition of hydrogenated AZO thin films have also been studied. |
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