Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs |
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| Authors: | Marco G. Pala Claudio Buran Stefano Poli Mireille Mouis |
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| Affiliation: | 1. IMEP-LAHC, Grenoble INP, 3 Parvis Louis Néel, 38016, Grenoble, France
2. Advanced Research Center on Electronic Systems, University of Bologna, 2 viale del Risorgimento, 40122, Bologna, Italy
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| Abstract: | We review recent results on the effect of surface roughness on the transport properties of ultra-short devices like Silicon nanowire and double-gate FETs. We use a full quantum treatment within the non equilibrium Green’s function (NEGF) formalism which allows us to take into account quantum confinement, quantum phase interference, out-of-equilibrium, and quasi-ballistic transport and focus on transfer characteristics and low-field mobility. |
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