Quantum transport including nonparabolicity and phonon scattering: application to silicon nanowires |
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| Authors: | Aniello Esposito Martin Frey Andreas Schenk |
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| Affiliation: | 1. Integrated Systems Laboratory, ETH Zurich, Gloriastrasse 35, 8092, Zurich, Switzerland
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| Abstract: | In this work, the particular and combined influence of nonparabolicity and phonon scattering on the device characteristics of a triple-gate silicon nanowire is investigated. In addition, different approximations of the retarded self-energy for electron-phonon scattering are analyzed in terms of the electrostatics, current and computational cost. |
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