| 大功率无衬底N－GaAlAs／P－GaAs：Si单异质结红外发光二极管 |
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| 引用本文： | 罗海荣.大功率无衬底N－GaAlAs／P－GaAs：Si单异质结红外发光二极管[J].半导体光电,1994(1). |
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| 作者姓名： | 罗海荣 |
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| 作者单位： | 重庆光电技术研究所 |
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| 摘 要： | 报道了一种大功率无衬底Ｎ－ＧａＡｌＡｓ／Ｐ－ＧａＡｓ：Ｓｉ单异质结红外发光二极管的制造工艺和主要光电特性。该器件在５０ｍＡ工作电流下，输出功率典型值７．５ｍＷ，最大功率１１ｍＷ。
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| 关 键 词： | 红外发光二极管，无衬底，GaAlAs／GaAs单异质结 |
High-power and Substrate-free N-GaAlAs/P-GaAs:Si Single-heterostructure Infrared Emitting Diodes |
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| Luo Hairong.High-power and Substrate-free N-GaAlAs/P-GaAs:Si Single-heterostructure Infrared Emitting Diodes[J].Semiconductor Optoelectronics,1994(1). |
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| Authors: | Luo Hairong |
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| Affiliation: | Chongqing Optoelectronics Research Institute.Yongchuan 632163 |
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| Abstract: | The fabrication technology and optoelctronic characteristics of high-power and substratefree N-GaAlAs/PGaAs:Si single-heterostructure infrared LED are reported.The device is characterized by the output power of over 11mW,with the typical value of 7.5mW at the injection current of 50mA. |
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| Keywords: | Infrared LED Substrate-Free GaAlAs/GaAs SH |
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