| Determination of Ge content in high concentration Ge-doped Czochralski Si single crystals by FTIR |
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| 引用本文： | JIANG Zhongwei ZHANG Weilian NIU Xinhuan. Determination of Ge content in high concentration Ge-doped Czochralski Si single crystals by FTIR[J]. 稀有金属(英文版), 2005, 24(3): 226-228 |
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| 作者姓名： | JIANG Zhongwei ZHANG Weilian NIU Xinhuan |
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| 作者单位： | Institute of Information Functional Materials, Hebei University of Teclmology, Tianjin 300130, China |
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| 基金项目： | The work is financially supported by the National Natural Science Foundation of China （No. 59772037） and the Natural Science Foundation of Hebei Province, China （No. 500016）. |
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| 摘 要： | SiGe single crystals with different Ge concentrations were measured by Fourier transform infrared （FTIR） spectroscopy at room temperature （RT） and 10 K. A new peak appears at the wave number of 710 cm^-1 and the spectroscopy becomes clearer with an increase in Ge content. The absorption strength and wave sharp of the 710 cm^-1 peak are independent of temperature. The relation of the absorption coefficient amax, the band width of half maximum （BWHM） Wit2 of the 710 cm^-1 peak, and the Ge concentration is determined with the Ge content obtained by SEM-EDX. The conversion factor is k = 1.211 at 10 K. Therefore, the Ge content in high concentration Ge doped CZ-Si single crystals can be determined by FTIR.
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| 关 键 词： | 锗 硅 合金 单晶系 光谱学 |
| 收稿时间： | 2004-07-12 |
Determination of Ge content in high concentration Ge-doped Czochralski Si single crystals by FTIR |
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| JIANG Zhongwei,ZHANG Weilian,NIU Xinhuan. Determination of Ge content in high concentration Ge-doped Czochralski Si single crystals by FTIR[J]. Rare Metals, 2005, 24(3): 226-228 |
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| Authors: | JIANG Zhongwei ZHANG Weilian NIU Xinhuan |
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| Abstract: | SiGe single crystals with different Ge concentrations were measured by Fourier transform infrared (FTIR) spec-troscopy at room temperature (RT) and 10 K. A new peak appears at the wave number of 710 cm-1 and the spectroscopybecomes clearer with an increase in Ge content. The absorption strength and wave sharp of the 710 cm-1 peak are inde-pendent of temperature. The relation of the absorption coefficient amax, the band width of half maximum (BWHM) W1/2 ofthe 710 cm-1 peak, and the Ge concentration is determined with the Ge content obtained by SEM-EDX. The conversionfactor is k = 1.211 at 10 K. Therefore, the Ge content in high concentration Ge doped CZ-Si single crystals can be deter-mined by FTIR. |
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| Keywords: | SiGe single crystal Ge content FTIR Czochralski method |
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