| 磷锗锌单晶生长装置的设计与优化 |
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| 引用本文： | 赵欣.磷锗锌单晶生长装置的设计与优化[J].新技术新工艺,2011(6):79-82. |
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| 作者姓名： | 赵欣 |
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| 作者单位： | 中国民航飞行学院研究生处,四川广汉,618307 |
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| 基金项目： | 四川省科技厅资金资助项目，中国民用航空飞行学院科研基金 |
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| 摘 要： | 根据磷锗锌（ZnGeP2）晶体的生长特性,分析了ZnGeP2单晶生长对生长炉温场的要求。在两温区单晶生长炉的基础上,设计出适合ZnGeP2单晶生长的三温区管式生长炉,并对其温场进行了设计与优化。在经优化的温场中进行ZnGeP2单晶生长,获得了尺寸达20 mm×30 mm、外观完整的单晶体。
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| 关 键 词： | 磷锗锌 晶体生长 三温区 温场设计 |
Design and Optimization on Growth Furnace of ZnGeP2 Single Crystal |
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| ZHAO Xin.Design and Optimization on Growth Furnace of ZnGeP2 Single Crystal[J].New Technology & New Process,2011(6):79-82. |
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| Authors: | ZHAO Xin |
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| Affiliation: | ZHAO Xin(Graduate Department,Civil Aviation Flight University of China,Guanghan 618307,China) |
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| Abstract: | The temperature-field requirements for ZnGeP2 crystal growth have been analyzed according to its characteristics on the crystal growth process.A crystal growth furnace with three-temperature-zone has been designed and fabricated based on a conventional vertical two-zone tubular resistance furnace.The temperature-field of the designed furnace has been test and optimized.An integral ZnGeP2 single crystal with a size of 20 mm×30 mm was obtained under the condition optimized from above temperature-field test. |
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| Keywords: | ZnGeP2 Crystal growth Three-temperature zone Temperature field design |
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