High-power ridge waveguide InGaAsN lasers fabricated with pulsed anodic oxidation |
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| Authors: | Yi Qu CY Liu SG Ma Shu Yuan Baoxue Bo Guojun Liu Huilin Jiang |
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| Affiliation: | Sch. of Mater. Eng., Nanyang Technol. Univ., Singapore, Singapore; |
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| Abstract: | High-power InGaAsN triple-quantum-well strain-compensated lasers grown by metal-organic chemical vapor deposition were fabricated with pulsed anodic oxidation. A maximum light power output of 145 mW was obtained from a 4-/spl mu/m ridge waveguide uncoated laser diode in continuous-wave (CW) mode at room temperature. The devices operated in CW mode up to 130/spl deg/C with a characteristic temperature of 138 K in range of 20/spl deg/C-90/spl deg/C. |
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