| SO I 单晶硅压力传感器模拟计算与优化设计 |
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| 引用本文： | 倪智琪,姚素英,张生才,赵毅强,张为,张维新.SO I 单晶硅压力传感器模拟计算与优化设计[J].传感技术学报,2003,16(1):92-95. |
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| 作者姓名： | 倪智琪 姚素英 张生才 赵毅强 张为 张维新 |
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| 作者单位： | 天津大学电子信息工程学院,天津,300072 |
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| 摘 要： | 利用有限元分析方法，借助ANSYS软件，对SOI单晶硅压力传感器进行一系列的分析和计算机模拟，探讨了传感器应变膜在固定宽度或固定面积条件下，宽长比对理论输出的影响，以及应变膜厚度对理论输出的影响，给出了设计应变膜的优化方案；并对根据模拟结果首次制作的SOI单晶硅压力传感器进行了测量，结果与理论值符合得较好。
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| 关 键 词： | 硅压力传感器 ANSYS 相对误差 膜厚比 宽长比 |
| 文章编号： | 1004-1699(2003)01-0092-04 |
| 修稿时间： | 2002年8月30日 |
Simulation &Optimal Design of
SO I Single-crystal Sil icon Pressure Sen sor |
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| NI Zhiqi,YAN Suying,ZHANG Shengcai,ZHAO Yiqiang,ZHANG Wei,ZHANG Weixin.Simulation &Optimal Design of
SO I Single-crystal Sil icon Pressure Sen sor[J].Journal of Transduction Technology,2003,16(1):92-95. |
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| Authors: | NI Zhiqi YAN Suying ZHANG Shengcai ZHAO Yiqiang ZHANG Wei ZHANG Weixin |
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| Affiliation: | Institu te of E lectron & Inf orm ation E ng ineering , T ianj in U niv ersity , T ianj in 300072, P. R. Ch ina |
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| Abstract: | Under the guide of Finite Element Analysis (FEA) theory, we analyzed and simulated a series of SOI single crystal silicon pressure sensor by using ANSYS software. We discussed how width height ratio affects theoretical output under the term of fixed width or fixed area, as well as how thickness of strain membrane affects theoretical output. We also presented optimal design of strain membrane. At last, we fabricated SOI pressure sensors under the guide of the results came from simulations, then measured them. Results are identical with theoretical output. |
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| Keywords: | silicon pressure sensor ANSYS relatively error membrane thickness ratio width height ratio |
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