Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires |
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| Authors: | Zhang Xi Lew Kok-Keong Nimmatoori Pramod Redwing Joan M Dickey Elizabeth C |
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| Affiliation: | Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA. |
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| Abstract: | Diameter-dependent compositions of Si(1-x)Ge(x) nanowires grown by a vapor-liquid-solid mechanism using SiH(4) and GeH(4) precursors are studied by transmission electron microscopy and X-ray energy dispersive spectroscopy. For the growth conditions studied, the Ge concentration in Si(1-x)Ge(x) nanowires shows a strong dependence on nanowire diameter, with the Ge concentration decreasing with decreasing nanowire diameter below approximately 50 nm. The size-dependent nature of Ge concentration in Si(1-x)Ge(x) NWs is strongly suggestive of Gibbs-Thomson effects and highlights another important phenomenon in nanowire growth. |
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