Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition |
| |
| Authors: | Y DengDG Zhao LC LeDS Jiang LL WuJJ Zhu H WangZS Liu SM ZhangHui Yang JW Liang |
| |
| Affiliation: | a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China |
| |
| Abstract: | The growth rate and its relationship with growth conditions of AlGaN alloy films by metalorganic chemical vapor deposition (MOCVD) are investigated. It is found that both parasitic reaction and competitive adsorption play important roles in determining the growth rate and Al incorporation in AlGaN. Low reactor pressure can weaken parasitic reactions, thus increasing the Al composition. In addition, a decrease of absolute amount of Ga atoms arriving on the substrate may lead to a lower Ga competitive power, and then a higher Al content in AlGaN film. |
| |
| Keywords: | 73 61 Ey 81 15 Gh 81 10 &minus h 61 10 &minus i |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
