Effects of ionizing radiation on short-channel thin-Oxide (200-Å) MOSFET's |
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Abstract: | The effect of ionizing radiation on n-channel MOSFET's with channel lengths ranging from 1.0 to 9.3 µm and gate oxides 200 Å thick was investigated. Irradiation to 106rads(Si) resulted in an increased shift of the threshold voltage as the channel length was shortened with those devices having channel lengths 2 µm continuing to operate in the enhancement mode. |
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