Scanning electron microscopy studies of double-layer silicon structures prepar by epitaxy and direct bonding

The electrical properties of multilayer structures obtained by direct bonding of silicon wafers and epitaxial growth have been investigated. The measurements were made by scanning electron microscopy (SEM) in either secondary electron or electron beam-induced current (EBIC) regime, using cross sections of the structures with a p-n junction formed in the subsurface region of the active layer. The measurements of defect recombination activity were made using Schottky diodes formed on the active layer surfaces. Parasitic p-n junctions in some samples under a small direct voltage have been observed and the reason for the appearance of such parasitic junctions has been established. Two types of defects with different distribution densities and amplitudes of EBIC contrast have been detected.