| CMOS工艺X射线图像传感器设计 |
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| 引用本文： | 孟丽娅,袁松,王庆祥. CMOS工艺X射线图像传感器设计[J]. 原子能科学技术, 2014, 48(10): 1891-1894. DOI: 10.7538/yzk.2014.48.10.1891 |
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| 作者姓名： | 孟丽娅 袁松 王庆祥 |
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| 作者单位： | 1.光电技术及系统教育部重点实验室，重庆400032；2.重庆大学 光电工程学院，重庆400032 |
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| 基金项目： | 国家自然科学基金资助项目(61071043)；重庆市自然科学基金资助项目 |
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| 摘 要： | 本文设计了一种不需闪烁体或增感屏，直接对X射线进行探测成像的线阵图像传感器，对其电荷收集进行了理论分析，设计了辐射加固的光敏元结构。采用0.5 μm DPTM CMOS工艺，针对单个像元内含不同个数光敏元的结构进行了流片和X射线实验测试。测试结果表明：该图像传感器暗信号电压约为1 V，随像元内光敏元个数的增加暗信号电压增大；饱和输出电压为2.4 V；随光敏元个数的增加，电荷收集总量增加，总寄生电容也同时增加，所设计的单个像元含3个光敏元的结构能得到相对更大的有效输出电压。
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| 关 键 词： | X射线 图像传感器 辐射加固 |
Design of CMOS Image Sensor for Direct X-ray Imaging |
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| MENG Li-ya,YUAN Song,WANG Qing-xiang. Design of CMOS Image Sensor for Direct X-ray Imaging[J]. Atomic Energy Science and Technology, 2014, 48(10): 1891-1894. DOI: 10.7538/yzk.2014.48.10.1891 |
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| Authors: | MENG Li-ya YUAN Song WANG Qing-xiang |
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| Affiliation: | 1.Key Laboratory of Optoelectronic Technology and Systems, Ministry of Education, Chongqing 400032, China; 2.College of Optoelectronic Engineering, Chongqing University, Chongqing 400032, China |
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| Abstract: | A CMOS image sensor for direct X-ray imaging without scintillator was designed. The charge collecting mechanism was theoretically analyzed, and radiation-hardened structure for its sensitive element was designed. The line array with different sensitive elements in pixel was taped out in 0.5 μm DPTM standard CMOS technology and tested by X-ray. The experiment results show that the dark signal output voltage of the line array is about 1 V, and saturated output voltage is 2.4 V. The collected charge and parasitic capacitor increase with sensitive elements. Three sensitive elements in one pixel can achieve higher effective output. |
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| Keywords: | X-ray image sensor radiation-hardened |
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