Effect of rinsing and drying on silicon surface cleaning for epitaxial growth

We investigated the effect of the rinsing and drying technique on the oxygen and carbon concentration on a silicon surface. Rinsing in deionized water increased the interfacial oxygen concentration and helped generate defects. Blow-drying was more efficient than spin-drying in reducing interfacial oxygen concentration. Exposure to the atmosphere was detrimental to obtaining high crystallinity in the epitaxial layer. We evaluated the effectiveness of the cleaning process by observing the grown epilayer and the epilayer/substrate interface.