Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates |
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| Authors: | D.S. Wuu W.K. Wang W.C. Shih R.H. Horng C.E. Lee W.Y. Lin J.S. Fang |
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| Affiliation: | Dept. of Mater. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan; |
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| Abstract: | Near-ultraviolet nitride-based light-emitting diodes (LEDs) with peak emission wavelengths around 410 nm were fabricated onto c-face patterned sapphire substrates (PSS). It was found that the electroluminescence intensity of the PSS LED shown 63% larger than that of the conventional LED. For a typical lamp-form PSS LED operating at a forward current of 20 mA, the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The improvement in the light intensity could be attributed to the decrease of threading dislocations and the increase of light extraction efficiency in the horizontal direction using a PSS. |
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