Phase transformations during the Ag-In plating and bonding of vertical diode elements of multijunction solar cells |
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Authors: | N P Klochko G S Khrypunov N D Volkova V R Kopach V N Lyubov M V Kirichenko A V Momotenko N M Kharchenko V A Nikitin |
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Affiliation: | 1. a National Technical University “Kharkiv Polytechnic Institute”, ul. Frunze 21, Kharkiv, 61002, Ukraine 2. Zhukovsky National Aerospace University “Kharkiv Aviation Institute”, ul. Chkalova 17, Kharkiv, 61070, Ukraine
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Abstract: | The conditions of the bonding of silicon multijunction solar cells with vertical p-n junctions using Ag-In solder are studied. The compositions of electrodeposited indium films on silicon wafers silver plated by screen printing and silver and indium films fabricated by layer-by-layer electrochemical deposition onto the surface of silicon vertical diode cells silver plated in vacuum are studied. Studying the electrochemical-deposition conditions, structure, and surface morphology of the grown layers showed that guaranteed bonding is provided by 8-min heat treatment at 400°C under the pressure of a stack of metallized silicon wafers; however, the ratio of the indium and silver layer thicknesses should not exceed 1: 3. As this condition is satisfied, the solder after wafer bonding has the InAg3 structure (or InAg3 with an Ag phase admixture), due to which the junction melting point exceeds 700°C, which guarantees the functioning of such solar cells under concentrated illumination. |
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