Charge transport mechanisms in anisotype n-TiO2/p-Si heterostructures |
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Authors: | A I Mostovyi V V Brus P D Maryanchuk |
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Affiliation: | 1. Fedkovych Chernivtsi National University, Chernivtsi, 58012, Ukraine 2. Chernivtsi Department, Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Chernivtsi, 58001, Ukraine
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Abstract: | Anisotype n-TiO2/p-Si heterojunctions are fabricated by the deposition of a TiO2 film on a polished poly-Si substrate using magnetron sputtering. The electrical properties of the heterojunctions are investigated and the dominant charge transport mechanisms are established; these are multi-step tunneling recombination via surface states at the metallurgical TiO2/Si interface at low forward biases V and tunneling at V > 0.6 V. The reverse current through the heterojunctions under study is analyzed within the tunneling mechanism. |
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