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双负阻区微分负阻器件的实现
引用本文:张根保,俞有瑛. 双负阻区微分负阻器件的实现[J]. 华北电力大学学报(自然科学版), 1988, 0(2)
作者姓名:张根保  俞有瑛
作者单位:华北电力学院北京研究生部,华北电力学院北京研究生部
摘    要:本文探讨具有两个负阻区的微分负阻器件的电路合成法实现问题。文中介绍了用两个N型负阻单口并联,实现一个具有两个负阻区的压控双N型负阻单口;和用两个S型负阻单口串联,实现一个具有两个负阻区的流控双S型负阻单口的方法。文章还给出了若干电路示例及其实测结果。

关 键 词:微分负阻器件  电路合成法

Realization of NDR Devices with Two Negative Resistance Regions
Abstract:The negative differential resistance devices with two negative resistance regions (twin-peak NDR devices) can be built by circuit synthesis approach. This paper introduces the realization of a twinpeak voltage controlled NDR device by parallel connection of two type-N one-ports, and the realization of a twin-peak current-controlled NDR device by series connection of two type-s one-ports. A few sample circuits along with their laboratory measurements are also presented.
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