双负阻区微分负阻器件的实现 |
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引用本文: | 张根保,俞有瑛. 双负阻区微分负阻器件的实现[J]. 华北电力大学学报(自然科学版), 1988, 0(2) |
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作者姓名: | 张根保 俞有瑛 |
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作者单位: | 华北电力学院北京研究生部,华北电力学院北京研究生部 |
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摘 要: | 本文探讨具有两个负阻区的微分负阻器件的电路合成法实现问题。文中介绍了用两个N型负阻单口并联,实现一个具有两个负阻区的压控双N型负阻单口;和用两个S型负阻单口串联,实现一个具有两个负阻区的流控双S型负阻单口的方法。文章还给出了若干电路示例及其实测结果。
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关 键 词: | 微分负阻器件 电路合成法 |
Realization of NDR Devices with Two Negative Resistance Regions |
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Abstract: | The negative differential resistance devices with two negative resistance regions (twin-peak NDR devices) can be built by circuit synthesis approach. This paper introduces the realization of a twinpeak voltage controlled NDR device by parallel connection of two type-N one-ports, and the realization of a twin-peak current-controlled NDR device by series connection of two type-s one-ports. A few sample circuits along with their laboratory measurements are also presented. |
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