Gentle FUSI NiSi metal gate process for high-k dielectric screening |
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Authors: | H.D.B. Gottlob M.C. Lemme T.J. Echtermeyer H. Kurz P.K. Hurley |
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Affiliation: | a Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany b Tyndall National Institute, University College Cork Lee Maltings, Prospect Row Cork, Ireland c Glebe Scientific Ltd., Newport, County Tipperary, Ireland |
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Abstract: | In this paper, a process flow well suited for screening of novel high-k dielectrics is presented. In vacuo silicon capping of the dielectrics excludes process and handling induced influences especially if hygroscopic materials are investigated. A gentle, low thermal budget process is demonstrated to form metal gate electrodes by turning the silicon capping into a fully silicided nickel silicide. This process enables the investigation of rare earth oxide based high-k dielectrics and specifically their intrinsic material properties using metal oxide semiconductor (MOS) capacitors. We demonstrate the formation of nickel monosilicide electrodes which show smooth interfaces to the lanthanum- and gadolinium-based high-k oxide films. The dielectrics have equivalent oxide thicknesses of EOT = 0.95 nm (lanthanum silicate) and EOT = 0.6 nm (epitaxial gadolinium oxide). |
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Keywords: | FUSI NiSi High-k Ultrathin dielectric Material screening |
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