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Observation of Ni silicide formations and field emission properties of Ni silicide nanowires |
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| Authors: | Joondong Kim Eung-Sug Lee Youngjin Kang Wayne A Anderson |
| Affiliation: | a Nano-Mechanical Systems Research Center, Korea Institute of Machinery and Materials (KIMM), Daejeon 305343, Republic of Korea b Department of Materials Science and Engineering, Chungnam National University, Daejeon 305764, Republic of Korea c Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260, USA |
| Abstract: | The Ni silicide nanowires were grown by physical vapor deposition. The morphological changes of silicide formation were observed on a gradient Ni film thickness, which visualized the critical thickness is 60-80 nm to grow nanowires. The field emission measurement provided uniform characteristics and high field enhancement factors were obtained to be 3180 and 3002 from the Ni silicide nanowires grown on a Si substrate and a tungsten plate, respectively. By using a conductive tungsten plate, the emission current was enhanced to be 172.5 μA/cm2 comparing to 76.5 μA/cm2 from a Si substrate at 5 V/μm. |
| Keywords: | Ni silicide nanowires Growth condition Field emission |
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