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Hf-O-N and HfO2 barrier layers for Hf-Ti-O gate dielectric thin films |
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| Authors: | K Ramani RK Singh |
| Affiliation: | a Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA b Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest, Romania c Major Analytical Instrumentation Center (MAIC), Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA |
| Abstract: | Hf-O-N and HfO2 thin films were evaluated as barrier layers for Hf-Ti-O metal oxide semiconductor capacitor structures. The films were processed by sequential pulsed laser deposition at 300 °C and ultra-violet ozone oxidation process at 500 °C. The as-deposited Hf-Ti-O films were polycrystalline in nature after oxidation at 500 °C and a fully crystallized (o)-HfTiO4 phase was formed upon high temperature annealing at 900 °C. The Hf-Ti-O films deposited on Hf-O-N barrier layer exhibited a higher dielectric constant than the films deposited on the HfO2 barrier layer. Leakage current densities lower than 5 × 10 A/cm2 were achieved with both barrier layers at a sub 20 Å equivalent oxide thickness. |
| Keywords: | Dielectrics High k UV Capacitance Leakage |
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