| 脉冲强激光辐照半导体材料损伤效应的解析研究 |
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| 引用本文： | 强希文,刘峰,张建泉. 脉冲强激光辐照半导体材料损伤效应的解析研究[J]. 光电子技术, 2000, 20(1): 52-58 |
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| 作者姓名： | 强希文 刘峰 张建泉 |
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| 作者单位： | 西北核技术研究所,西安,710024 |
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| 摘 要： | 研究了强激光辐照半导体材料Insb时的热输运、自由载流子输运和光子输运过程，探讨了激光对半导体材料的损伤机理。为半导体材料的辐射效应和抗辐射加固技术提供了一个理论证据。
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| 关 键 词： | 强激光 半导体材料 辐照效应 损伤机理 |
| 修稿时间： | 1999-09-06 |
An Analytical Investigation on Semiconductor Material Damage Induced by Pulsed High-power Laser Beams |
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| Qiang Xiwen,Liu Feng,Zhang Jianquan. An Analytical Investigation on Semiconductor Material Damage Induced by Pulsed High-power Laser Beams[J]. Optoelectronic Technology, 2000, 20(1): 52-58 |
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| Authors: | Qiang Xiwen Liu Feng Zhang Jianquan |
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| Affiliation: | Qiang Xiwen ,Liu Feng ,ZhangJianquan (Northwest Institute of Nuclear Technology,Xi'an,710024) |
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| Abstract: | It is given that an analytical investigation on thermal, free carrier, and photon transport of semiconductor InSb material which is irradiated by pulsed high-power laser beams. The damage mechanism of semiconductor material is discussed. From these results, the theoretical basis of laser irradiating effects and hardening techniques on semiconductor materials is obtained. |
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| Keywords: | pulsed high-power laser beams laser irradiating effects semiconductor material damage mechanism |
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