| 4H-SiC离子注入层的欧姆接触的制备 |
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| 引用本文： | 王守国,张义门,张玉明.4H-SiC离子注入层的欧姆接触的制备[J].电子科技大学学报（自然科学版）,2003,32(2):203-206. |
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| 作者姓名： | 王守国 张义门 张玉明 |
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| 作者单位： | 1.西安电子科技大学微电子所 西安 710071; |
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| 基金项目： | 国防预研基金，8.1.7.3， |
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| 摘 要： | 用氮离子注入的方法制备了4H-SiC欧姆接触层。注入层的离子浓度分布由蒙特卡罗分析软件TRIM模拟提取,Si面4H-SiC-Ni/Cr合金欧姆接触的特性由传输线方法结构进行了测量,得到氮离子注入层的方块电阻Rsh为30 kΩ/square,Ni/Cr合金与离子注入层的欧姆接触电阻ρc为7.1×10-4Ωcm2。
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| 关 键 词： | SiC 离子注入 欧姆接触 方块电阻 |
| 收稿时间： | 2002-09-26 |
Fabrication of Ohmic Contacts to 4H-SiC Created by Ion-Implantation |
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| Abstract.Fabrication of Ohmic Contacts to 4H-SiC Created by Ion-Implantation[J].Journal of University of Electronic Science and Technology of China,2003,32(2):203-206. |
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| Authors: | Abstract |
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| Affiliation: | 1.Institute of Microelectronics,Xidian University Xi'an 710071;2.Department of Electronics,Northwest University Xi'an 710069 |
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| Abstract: | Doping by nitrogen ion-implantation is used to fabricate the Ohmic contacts of 4H-SiC. The implantation depth profile is simulated with the Monte Carlo simulator TRIM. Ni/Cr/Si-face 4H-SiC Ohmic contacts are measured by Transfer Length Method structures. The result for sheet resistance Rsh of the implanted layers is 30 kΩ/square. The specific contact resistances ρc of Ohmic contacts is 7.1×10-4 Ωcm2. |
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| Keywords: | SiC silicon carbide ion implantation Ohmic contact sheet resistance |
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