Characterization of polysilicon resistors in sub-0.25 μm CMOSULSI applications |
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| Authors: | Wen-Chau Liu Kong-Beng Thei Hung-Ming Chuang Kun-Wei Lin Chin-Chuan Cheng Yen-Shih Ho Chi-Wen Su Shyh-Chyi Wong Chih-Hsien Lin Diaz C.H. |
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| Affiliation: | Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan; |
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| Abstract: | The characteristics of polysilicon resistors in sub-0.25 μm CMOS ULSI applications have been studied. Based on the presented sub-0.25 μm CMOS borderless contact, both n+ and p+ polysilicon resistors with Ti- and Co-salicide self-aligned process are used at the ends of each resistor. A simple and useful model is proposed to analyze and calculate the essential parameters of polysilicon resistors including electrical delta W(ΔW), interface resistance Rinterface, and pure sheet resistance Rpure . This approach can substantially help engineers in designing and fabricating the precise polysilicon resistors in sub-0.25 μm CMOS technology |
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