Fabrication and characterization of ZnO film based UV photodetector |
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| Authors: | C Y Liu B P Zhang Z W Lu N T Binh K Wakatsuki Y Segawa R Mu |
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| Affiliation: | (1) Department of Physics, Tonghua Teachers’ College, Tonghua, 134002, China;(2) Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), 519-1399 Aoba, Aramaki, Aoba-ku, Sendai 980-0845, Japan;(3) Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen, 361005, P.R. China;(4) State Key Laboratory of Applied Optics, Changchun Institute of Optics and Fine Mechanics and Physics, CAS, Changchun, 130022, China;(5) Department of Physics, Fisk University, Nashville, TN 37208, USA |
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| Abstract: | ZnO films were deposited on Al2O3 substrates by metalorganic chemical vapor deposition (MOCVD) at temperatures of 400, 450 and 500 °C. The photoconductivity
of the films has been analyzed for ultraviolet detector application. The changes in photoresponse and current–voltage (I–V) are correlated with the deposition temperatures and microcrystalline structures. The study suggested that the photoresponse
originating from bulk- and surface-related processes. For a film deposited at 400 °C, a 1 ms fast rising time and a 5 ms fall
time were observed. The photoresponsivity is ∼24 A/W with a 3 V bias. |
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