| SOIMOSFET因辐照引起的部分耗尽与全耗尽过渡区的漂移 |
| |
| 引用本文： | 万新恒,张兴,黄如,甘学温,王阳元. SOIMOSFET因辐照引起的部分耗尽与全耗尽过渡区的漂移[J]. 半导体学报, 2001, 22(3): 358-361 |
| |
| 作者姓名： | 万新恒 张兴 黄如 甘学温 王阳元 |
| |
| 作者单位： | 北京大学微电子学研究所，北京100871 |
| |
| 摘 要： | 首次报道了辐照所引起的 SOI/ MOS器件 PD (部分耗尽 )与 FD (全耗尽 )过渡区的漂移 .基于含总剂量辐照效应的 SOI MOSFET统一模型 ,模拟了 FD与 PD过渡区随辐照剂量的漂移 .讨论了辐照引起 FD与 PD器件转化的原因 ,进一步分析了 FD与 PD器件的辐照效应
|
| 关 键 词： | SOIMOSFET 辐照特性 |
| 文章编号： | 0253-4177（2001）03-0358-04 |
| 修稿时间： | 2000-06-20 |
Shift of Transitions Between Partially and Fully-Depleted Behavior in SOI MOSFET due to Radiation |
| |
| WAN Xin-heng,ZHANG Xing,HUANG Ru,GAN Xue-wen,WANG Yang-Yuan. Shift of Transitions Between Partially and Fully-Depleted Behavior in SOI MOSFET due to Radiation[J]. Chinese Journal of Semiconductors, 2001, 22(3): 358-361 |
| |
| Authors: | WAN Xin-heng ZHANG Xing HUANG Ru GAN Xue-wen WANG Yang-Yuan |
| |
| Abstract: | The shift of transitions between partially and fully depleted behavior in SOI MOSFET due to the radiation is first reported.Based on the derived fully continuous compact SOI MOSFET model,including the total dose effects,the shift of transitions between partially and fully depleted behavior due to the radiation is simulated.Furthermore,the total dose ionizing effects of the partially and fully depleted SOI MOSFETs are briefly discussed. |
| |
| Keywords: | SOI MOSFET radiation characteristics |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
