Studies of aluminum Schottky barrier gate annealing on GaAs FET structures |
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Authors: | K Sleger A Christou |
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Affiliation: | Naval Research Laboratory, Washington, DC 20375 U.S.A. |
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Abstract: | Controlled annealing experiments on special GaAs FET structures have been used to assess the integrity of Al/nGaAs Schottky barrier gates. Metallurgical properties of the Al/nGaAs interface were analyzed using microspot Auger electron spectroscopy. Results indicate interdiffusion between Al and GaAs at the baseline annealing temperature of 275°C. At this temperature the three terminal static FET parameters were unaffected by the annealing, but the two terminal gate/source static characteristic was somewhat improved over unannealed control FETs. Annealing the Al gate up to 450°C does not appear to be harmful to the gate/source two terminal static characteristic although at this temperature three terminal static FET characteristics are severely degraded. The Al/nGaAs interface is assessed as being both metallurgically and electrically stable when employed in inert ambient environments up to 275°C for 24 hr. |
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