A discrete element small-signal equivalent circuit for forward-biased p+n diodes containing deep levels |
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Authors: | PJ Strong DV Morgan MJ Howes |
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Affiliation: | Department of Electrical and Electronic Engineering, The University of Leeds, Leeds LS2 9JT, England |
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Abstract: | A discrete element small-signal equivalent circuit model for p-n diodes containing deep defect levels is developed, by extending an existing model for undamaged devices. With the aid of a simple analytical expression which accurately describes the forward bias d.c. current, the enhanced small-signal conductance due to carrier recombination in the depletion region is included in the model. The influence of trapped charge on the space charge capacitance is incorporated using a simplified version of the analysis of Beguwala and Crowell. The predictions of the model are verified by experimental data from silicon p+n diodes, in which deep levels have been induced by electron irradiation. It is shown that the deep level activation energies may be estimated from the forward bias capacitance-voltage characteristics, yielding values which agree well with those obtained by established techniques. |
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