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Infrared field induced Gunn oscillations in GaAs
Authors:AV Nurmikko  BD Schwartz  SA Jamison  RE Enstrom
Affiliation:Division of Engineering, Brown University, Providence, RI 02912, U.S.A.;RCA Laboratories, Princeton, NJ 08540, U.S.A.
Abstract:Experimental results are presented which show that intense i.r. laser radiation can enhance intervalley carrier transfer and induce Gunn oscillations in GaAs by direct carrier heating. Nanosecond pulses from a mode-locked CO2 laser at 10.6 μm wavelength have been used to trigger the instability. The results suggest applications in direct optical monitoring of fast hot carrier dynamics and high speed optical modulation of Gunn microwave sources.
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