High-frequency thermal noise in MOSFETs |
| |
| Authors: | W.A. Baril H.M. Choe A. van der Ziel S.T. Hsu |
| |
| Affiliation: | Electrical Engineering Department, University of Minnesota, Minneapolis, MN 55455, U.S.A.;R.C.A. Laboratories, Princeton, NJ 08540, U.S.A. |
| |
| Abstract: | Noise measurements on large-channel silicon on saphire (SOS) MOSFETs, at frequencies where transit time effects become important, clearly show that the high frequency noise increases with increasing frequency, as predicted theoretically. Qualitative agreement exists with the theory; quantitative agreement is not achievable, because the low-frequency thermal noise is masked by flicker noise and (or) trapping noise. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
