Dielectric properties and charge storage characteristics of the metal-TiO2-SiO2-Si structure |
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Authors: | DY Joh WW Grannemann WD Brown |
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Affiliation: | Department of Electrical Engineering and Computer Science, The University of New Mexico, Albuquerque, NM 87131, U.S.A.;University of Arkansas, Fayetteville, AR 72701, U.S.A. |
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Abstract: | Semiconductor memory elements have been fabricated on silicon utilizing electron-beam evaporated TiO2 as the charge storage insulator medium. The dielectric and charge storage properties of TiO2 films have been characterized as a function of TiO2 deposition conditions and post-deposition annealing. Our results show that both dielectric constant and charge storage properties are enhanced by evaporation of the TiO2 in an oxygen ambient and substrate heating during evaporation. Post-deposition annealing in an oxygen ambient is also shown to increase the dielectric constant. M-TiO2-SiO2-Si structures with a 1000 Å layer of TiO2 typically exhibit 5 V memory windows for a ±15 V write/erase pulse. |
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