Recombination level selection criteria for lifetime reduction in integrated circuits

In the past, lifetime control in integrated circuits has been done on an empirical basis. This paper introduces selection criteria for recombination centers which are to be used for reducing minority carrier lifetime in integrated circuits. It is shown that the recombination level should have a large lifetime ratio (τ_SC/τ_LL) in order to obtain minority carrier lifetime reduction with minimal increase in the leakage current, and should possess large capture cross section values in order to minimize compensation effects. Using these criteria, preferred locations for the recombination center have been defined for both p and n type silicon, and the trade-off between reduction of lifetime and increase in leakage current has been shown to degrade with increase in resistivity and ambient temperature. These criteria have also allowed a quantitative comparison between various lifetime control techniques for the first time, and platinum doping has been identified as the most favorable lifetime control process at the present time.