Theoretical analysis of a novel MPN gallium arsenide Schottky barrier solar cell

Theoretical analysis for a novel Au-p-n GaAs Schottky barrier solar cell has been made in this note. It is shown that barrier height equal to the energy band gap of GaAs can be obtained in the proposed cell structure if the thickness and dopant density of the p-GaAs layer are properly chosen. Calculations of the barrier height as function of the thickness and dopant density of the p-layer have been carried out for a Au-p-n GaAs Schottky barrier cell. It is shown that AMO efficiency around 22% can be achieved in the proposed solar cell when N_D = 10¹⁶ cm^?3, N_A = 8 × 10¹⁸ cm^?3 and $\text{W}{}_{\mathrm{p}}\text{= 100}\text{A}\text{?}$ are chosen.